Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices-Reference-Cited by-同舟云学术

Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices

Published:2017-06 Issue:3 Volume:24 Page:75-96
ISSN:1005-8885
Container-title:The Journal of China Universities of Posts and Telecommunications
language:en
Short-container-title:The Journal of China Universities of Posts and Telecommunications

Author:

Shijun Liu,Xuecheng Zou

Publisher

Elsevier BV

Subject

Computer Networks and Communications,Information Systems,Signal Processing

Reference21 articles.

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2. A 128 Gb 2 b/cell NAND flash memory in 14 nm technology with tprog=640 μs and 800 Mb/s I/O rate;Lee,2016

3. 256 Gb 3 b/cell V-NAND flash memory with 48 stacked WL layers;Kang,2016

4. Future memory technologies;Lee,2008

5. BiCS flash as a future 3D non-volatile memory technology for ultra high density storage devices;Aochi,2009

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5. Manufacturing Challenges and Cost Evaluation of New Generation 3D Memories;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26