Electronic structure and morphology of SiC films grown on Si(111) using C60 as a precursor-Reference-Cited by-同舟云学术

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Electronic structure and morphology of SiC films grown on Si(111) using C60 as a precursor

Published:2000-05 Issue: Volume:454-456 Page:827-831
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Schiavuta P.,Cepek C.,Sancrotti M.,Pedio M.,Berti M.,De Salvador D.,Drigo A.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Growth of silicon carbide films via C60 precursors

3. Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization

4. SiC film formation and growth by the thermal reaction of aC60film adsorbed on a Si(111)-(7×7) surface: Bonding nature ofC60molecules and SiC-film surface phonons

5. Adsorption of individual C60molecules on Si(111)

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1. Equilibrium Prediction of the Role of Key Species in the Chemical Vapor Deposition of Silicon Carbide;Journal of Inorganic Materials;2008-12-04

2. Preparation of Silicon Carbide Coatings from Liquid Carbosilanes by Chemical Vapor Deposition;Journal of Materials Engineering and Performance;2007-12

3. SiC Formation Through Interface Reaction between C60and Si in Plasma Environment;Plasma Science and Technology;2007-02

4. XPS and STM study of SiC synthesized by acetylene and disilane reaction with the Si(100)2×1 surface;Surface Science;2005-05

5. Effect of the silicon surface step on the acetylene reaction with the Si(111)7×7 reconstructed surface;Surface Science;2004-09

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