Kinetics of hydrogen desorption from germanium-covered Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference69 articles.
1. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
2. Growth Rate of Doped and Undoped Silicon by Ultra‐High Vacuum Chemical Vapor Deposition
3. In situ doping of Si and Si1−xGex in ultrahigh vacuum chemical vapor deposition
4. Low temperature Si2H6 Si epitaxy in-situ doped with AsH3/SiH4
5. Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6
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1. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
2. Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth;The Journal of Physical Chemistry C;2013-12-24
3. Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces;Surface Science;2009-10
4. Atomic and Electronic Structure of Pyrrole on Ge(100);The Journal of Physical Chemistry C;2008-04-18
5. Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1−x)Gex(001)-(2×1) surfaces;The Journal of Chemical Physics;2007-01-28
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