Infrared spectroscopy as a probe of fundamental processes in microelectronics: silicon wafer cleaning and bonding-Reference-Cited by-同舟云学术

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Infrared spectroscopy as a probe of fundamental processes in microelectronics: silicon wafer cleaning and bonding

Published:1996-12 Issue:1-3 Volume:368 Page:163-178
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Weldon M.K.,Marsico V.E.,Chabal Y.J.,Hamann D.R.,Christman S.B.,Chaban E.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference42 articles.

1. Ideal hydrogen termination of the Si (111) surface

2. Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

3. Lineshape analysis of the SiH stretching mode of the ideally H-terminated Si(111) surface: the role of dynamical dipole coupling

4. Imperfections on the chemically prepared, ideally H-terminated Si(111)-(1 × 1) surfaces

5. Silicon‐On‐Insulator by Wafer Bonding: A Review

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4. Tailoring Electric Field Standing Waves in Reflection–Absorption Infrared Spectroscopy to Enhance Absorbance in Buried Molecular Layers;The Journal of Physical Chemistry C;2020-07-07

5. Thick-film silicon-on-insulator wafers preparation and properties;Handbook of Silicon Based MEMS Materials and Technologies;2020

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