Reactions of low coverages of Eu, Gd, Er and Pr on Si(111) — a search for 2D silicides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. d and f metal interface formation on silicon
2. Rare earth overlayers on silicon
3. Thermal evolution of the Er/Si(111) interface: bulk and surface electronic states
4. Electronic structure of erbium suicide ultra-thin films
5. Growth of a two-dimensional Er silicide on Si(111)
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1. Interaction of Oxygen and Gadolinium with Si(100)-2x1 Surface. Formation of a System with 1-eV Work Function;Ukrainian Journal of Physics;2015-02
2. Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111);Physical Chemistry Chemical Physics;2015
3. Surface etching induced by Ce silicide formation on Si(100);Surface Science;2007-09
4. One-dimensional chain structures produced by Ce on Si(111);Surface Science;2005-12
5. Role of step roughening in the formation of Ce silicide on Si(111);Surface Science;2005-04
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