Strain field observed at the SiO2/Si(111) interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. Surface roughness at the Si(100)-SiO2interface
2. Atomic structure at the (111) Si‐SiO2interface
3. Chemical structure of ultrathin thermally grown oxides on a Si(100)-wafer using core level photoemission
4. X-ray diffraction evidence for the existence of epitaxial microcrystallites in thermally oxidized SiO2 thin films on Si(111) surfaces
5. Structural relaxation of SiO2/Si interfacial layer during annealing
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1. Initial Phase of Photoelectrochemical Conditioning of Silicon in Alkaline Media: Surface Chemistry and Topography;The Journal of Physical Chemistry C;2013-08-07
2. The Initial Phase of Photoelectrochemical Anodization of Si in Alkaline Media Investigated by Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Scanning Probe Microscopy (SPM);MRS Proceedings;2013
3. Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction;Journal of Physics: Condensed Matter;2010-11-15
4. Scaling effects upon fractal etch pattern formation on silicon photoelectrodes;Electrochimica Acta;2009-12
5. Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction;Journal of Applied Physics;2009-08-15
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