Strain evolution in Si substrate due to implantation of MeV ion observed by extremely asymmetric x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3202329
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1. Ion implantation doping and isolation of GaN
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3. Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography
4. X-Ray Rocking Curve Study of the Strain Profile Formed by MeV Ion Implantation into (111) Silicon Wafers
5. Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals
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1. RaDMaX online: a web-based program for the determination of strain and damage profiles in irradiated crystals using X-ray diffraction;Journal of Applied Crystallography;2020-03-25
2. Behavior of Peak Intensity of Rocking Curve for Asymmetric Bragg Reflection Uniquely Determined by Strain Distribution;e-Journal of Surface Science and Nanotechnology;2013
3. Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study;Journal of Materials Science;2011-07
4. Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction;Journal of Physics: Condensed Matter;2010-11-15
5. Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals;Journal of Physics D: Applied Physics;2010-10-27
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