Rearrangement of dimers in a dimer–adatom–stacking fault structure on an Si(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. A model for nucleation and growth mechanism of Si(111)-7 × 7 domains in the Si(111)-1 × 1 matrix
3. An hypothesis on the role of oxygen in the Si(111)-1 × 1 → 7 × 7 phase transition
4. Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfaces
5. An analytical reflection and emission UHV surface electron microscope
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Study of the restoration of Se/Si()-7×7 reconstructed surfaces: preservation of the bulk-terminated state;Surface Science;2002-04
2. Characteristic structures of the Si(111)-7×7 surface step studied by scanning tunneling microscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
3. Size changes ofn×nstacking-fault half units of dimer–adatom–stacking-fault structures on quenched Si(111) surfaces;Physical Review B;1999-11-15
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