A model for nucleation and growth mechanism of Si(111)-7 × 7 domains in the Si(111)-1 × 1 matrix
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference8 articles.
1. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
2. Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy images
3. Tunneling Images of Atomic Steps on the Si(111)7×7 Surface
4. The (7 × 7) ↔ (1 × 1) phase transition on Si(111)
5. Low Voltage Electron Diffraction Study of the Oxidation and Reduction of Silicon
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1. Regular arrangement of nanometre-scale clusters by surface strain on stabilized Cl/Si(111);Journal of Physics: Condensed Matter;2007-02-13
2. Formation mechanism of the Si(111)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves;Surface Science;2003-03
3. Effect of Steps on Structural Phase Transitions of Si(111) 7×7 Surfaces;Japanese Journal of Applied Physics;2000-07-30
4. Kinetics of dimer-adatom–stacking-fault reconstruction on laser-quenched Si(111) surfaces;Physical Review B;2000-07-15
5. Formation and annihilation of various stacking-fault half units in dimer–adatom–stacking-fault structures on quenched Si(111) surfaces;Physical Review B;2000-06-15
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