Growth of nanoscale Ge magic islands on Si()-7×7 substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Formation of uniform nanoscale Ge islands on Si(1 1 1)-7 × 7 substrate
2. Scanning-tunneling-microscopy study of surface morphology at the initial growth stage of Si on a 7×7 superlattice surface of Si(111)
3. A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111)
4. Influence of Surface Structure on Epitaxial Growth of Si on Si(111)-(7 × 7) Substrate
5. Formation of uniform nanoscale Si islands on a Si(111)-7×7 substrate
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1. 2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures;Journal of Crystal Growth;2020-02
2. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction;Applied Surface Science;2016-05
3. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11
4. Bibliography;Mondo Nano;2015
5. Notes;Mondo Nano;2015
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