Polarity dependent carbon enrichment on 6H–SiC{} due to low energy ion bombardment-Reference-Cited by-同舟云学术

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Polarity dependent carbon enrichment on 6H–SiC{} due to low energy ion bombardment

Published:2003-02 Issue:1-2 Volume:526 Page:L133-L136
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Battistig G,Lábár J.L,Gurbán S,Sulyok A,Menyhard M,Vickridge I.C,Szilagyi E,Malherbe J,Odendaal Q

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference14 articles.

1. Properties of Silicon Carbide,1995

2. Surface analysis of 6HSiC

3. 6H-SiC{0001} X-ray photoelectron diffraction characterization used for polarity determination

4. Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

5. The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Identification of 6H-SiC polar faces with pull-off force of atomic force microscopy;Applied Surface Science;2016-12

2. Mechanical properties of computationally designed novel carbon enriched Si1−xCx ceramics: A molecular dynamics simulation study;Computational Materials Science;2015-12

3. Computational design of novel carbon enriched Si1−C ceramics: A molecular dynamics simulation study;Computational Materials Science;2015-01

4. Diffusion of fission products and radiation damage in SiC;Journal of Physics D: Applied Physics;2013-10-28

5. In-depth distribution of ion beam damage in SiC;Vacuum;2012-01

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