Comparative study of the epitaxial growth of Cu on MgO(001) and on hydrogen terminated Si(001)-Reference-Cited by-同舟云学术

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Comparative study of the epitaxial growth of Cu on MgO(001) and on hydrogen terminated Si(001)

Published:2001-06 Issue:1-3 Volume:481 Page:87-96
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Mewes T,Rickart M,Mougin A,Demokritov S.O,Fassbender J,Hillebrands B,Scheib M

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference26 articles.

1. Sampling-induced hidden cycles in correlated random rough surfaces

2. X-ray and neutron scattering from rough surfaces

3. Surface/interface-roughness-induced demagnetizing effect in thin magnetic films

4. Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In‐plane epitaxial relation and channeling analysis

5. Low‐temperature silicon cleaning via hydrogen passivation and conditions for epitaxy

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4. Inhomogeneous perpendicular magnetic anisotropy as a source of higher-order quasistatic and dynamic anisotropies;Physical Review B;2018-01-26

5. Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process;Scientific Reports;2017-05-10

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