Digital computation and in situ STM approach of silicon anisotropic etching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions
2. Etching mechanism and atomic structure of H-Si(111) surfaces prepared in NH4F
3. Etching of Silicon in NaOH Solutions: II . Electrochemical Studies of n‐Si(111) and (100) and Mechanism of the Dissolution
4. Structure of Si(111) surfaces etched in 40% NH4F: Influence of the doping
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