Etching mechanism and atomic structure of H-Si(111) surfaces prepared in NH4F
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering
Reference35 articles.
1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
2. Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
3. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
4. Ideal hydrogen termination of the Si (111) surface
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