Origin of the seminetal-to-semiconductor transition observed in two-dimensional Er silicide upon H exposure: evidence of two chemisorption sites
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Structure of a two-dimensional epitaxial Er silicide on Si(111) investigated by Auger-electron diffraction
2. Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)
3. STM investigation of 2- and 3-dimensional Er disilicide grown epitaxially on Si(111)
4. Electronic structure and interfacial geometry of epitaxial two-dimensional Er silicide on Si(111)
5. Atomic structure and thermal stability of two-dimensional Er silicide on Si(111)
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1. Hydrogen sorption sites in holmium silicide on silicon(111);Surface Science;2010-04
2. Theoretical studies of Sm/Si(111)–n×1 (n=5, 7) and Sm/Si(111)–(8×2) structures;Surface Science;2009-09
3. Investigation of the geometric and electronic structures of ErSi(2−x) with the density functional theory and comparison with STM images;Surface Science;2005-12
4. Structure of clean and H-saturated epitaxial two-dimensional Er silicide on Si(111) studied by SEXAFS;Surface Science;2004-04
5. Investigation of a two-dimensional dysprosium germanide on Ge(111): A medium-energy ion-scattering study including direct observation of a reversal of top-layer buckling upon adsorption of hydrogen;Physical Review B;2000-08-15
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