Structure of clean and H-saturated epitaxial two-dimensional Er silicide on Si(111) studied by SEXAFS-Reference-Cited by-同舟云学术

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Structure of clean and H-saturated epitaxial two-dimensional Er silicide on Si(111) studied by SEXAFS

Published:2004-04 Issue:1-3 Volume:555 Page:94-100
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Tuilier M.-H,Pirri C,Berling D,Bolmont D,Gewinner G,Wetzel P

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference25 articles.

1. Rare earth overlayers on silicon

2. Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7

3. Structure of a two-dimensional epitaxial Er silicide on Si(111) investigated by Auger-electron diffraction

4. Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)

5. A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rare-earth silicide thin films on the Si(111) surface;Physical Review B;2016-05-06

2. Directional molecular sliding at room temperature on a silicon runway;Nanoscale;2013

3. Theoretical studies of Sm/Si(111)–n×1 (n=5, 7) and Sm/Si(111)–(8×2) structures;Surface Science;2009-09

4. Investigation of the geometric and electronic structures of ErSi(2−x) with the density functional theory and comparison with STM images;Surface Science;2005-12

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