Nucleation along step edges during Si epitaxial growth on the Si(111) surface observed by STM
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. the Proceedings of the 5th International Symposium on Silicon Molecular Beam Epitaxy,1994
2. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
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4. Step-structure dependent step-flow: models for the homoepitaxial growth at the atomic steps on Si(111)7 × 7
5. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
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