Observations regarding a c(4×4) C–Si(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference22 articles.
1. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
2. Observation of the formation of a carbon-rich surface layer in silicon
3. X‐ray photoelectron spectroscopic investigation of carbon incorporation and segregation during pseudomorphic growth of Si1−yCyon Si(001)
4. Observation of c(4 × 4) LEED pattern induced by reaction of Si(100) surface with C2H4
5. Reaction of Si surfaces with a C2H4 beam
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1. Sn-induced c(4×4) reconstruction on the C-incorporated Si(001)-4∘ off surface;Surface Science;2023-04
2. Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate;Journal of the Korean Physical Society;2020-06
3. Origin of ordered two-dimensional structure ofSi(337)−4×1transformed fromSi(5 5 12)−2×1;Physical Review B;2010-06-18
4. Irreversible structural transformation of Si(114)-2×1 induced by subsurface carbon;Surface Science;2009-08
5. HREELS, STM, and LEED studies of theSi(100)−c(4×4)surface at 100 and300K: Formation of Si-C surface dimers;Physical Review B;2006-06-28
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