Epitaxial growth of Cu onto Si(111) surfaces at low temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. 7 × 7 Si(111)Cu interfaces: Combined LEED, AES and EELS measurements
2. AES, LEED and TDS studies of Cu on Si(111)7 × 7 and Si(100)2 × 1
3. Compound formation and bonding configuration at the Si-Cu interface
4. Nucleation of Cu on Si(111)7 × 7 and atomic structure of the Cu/Si(111) interface
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1. Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition;AIP Advances;2016-05
2. Effects of annealing processes on Cu x Si1-x thin films;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2016-02
3. Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti;Microelectronics Reliability;2014-11
4. Magnetic properties of Co films grown on the modified Si(111) surface;Physics of the Solid State;2014-10
5. Structure of the Co/Si(111) 13×13 surface revisited;Surface Science;2014-07
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