Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition-Reference-Cited by-同舟云学术

Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition

Published:2016-05 Issue:5 Volume:6 Page:055106
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhang Song¹,Wu Jun¹^ORCID,He Zhiqiang¹,Xie Jun²,Lu Jingqi³,Tu Rong¹,Zhang Lianmeng¹⁴,Shi Ji⁵

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, People’s Republic of China

2. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, People’s Republic of China

3. School of Science, Wuhan University of Technology, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, People’s Republic of China

4. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

5. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552, Japan

Funder

111 Project

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Hubei Province (Hubei Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948976

Reference24 articles.

1. Selective electroless copper plating on silicon seeded by copper ion implantation

2. Refractory metal silicides for VLSI applications

3. Electrical transport in thin films of copper silicide

4. Metal silicides: An integral part of microelectronics

5. Si-Cu Thin Film Electrode with Kirkendall Voids Structure for Lithium-Ion Batteries

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