An in-situ study of structure and magnetic properties of Fe films on the sulphur passivated Ge(100) surface at 150°C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Photoemission surface core-level study of sulfur adsorption on Ge(100)
2. Chemisorption of sulfur on Ge(100)
3. Surface-bonding geometry of (2×1)S/Ge(001) by the normal-emission angle-resolved photoemission extended-fine-structure technique
4. An X-ray absorption fine structure study of Ge(001)(2×1)-S
5. Semiconductor-surface restoration by valence-mending adsorbates: Application to Si(100):S and Si(100):Se
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1. ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation;ECS Transactions;2019-12-17
2. Atomic Layer Deposition of High-κ Dielectrics on Sulphur-Passivated Germanium;Journal of The Electrochemical Society;2011
3. Investigations of the Surface Chemical Composition and Atomic Structure of ex-situ Sulfur Passivated Ge(100);ECS Transactions;2009-09-25
4. Effect of modification of S-terminated Ge(100) surface on ALD HfO2 gate stack;Applied Surface Science;2009-05
5. Electrical Properties of Thin Iron Films Grown on Clean Si(100) and on Si(100)-c(4*12)-Al Surface Phase;e-Journal of Surface Science and Nanotechnology;2009
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