The initial stages of Ge–GaAs(100) interface formation studied by reflectance anisotropy spectroscopy and low-energy electron diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference13 articles.
1. Initial stages of Ge/GaAs(100) interface formation
2. LEED and AES studies of the initial growth of Ge epilayers on GaAs(100)
3. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors
4. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
5. Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ge-induced(1×2)surface reconstruction on GaAs(001): A precursor to As segregation;Physical Review B;2008-05-09
2. Reflection anisotropy spectroscopy;Reports on Progress in Physics;2005-05-05
3. Molecular-beam epitaxy of Ge on GaAs(001) and Si capping;Journal of Applied Physics;2003-03
4. Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy;Physical Review B;2002-08-06
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