The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference10 articles.
1. Electronic structure of Ge/Si monolayer strained-layer superlattices
2. Are bare surfaces detrimental in epitaxial growth?
3. Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxy
4. Ge growth on Si using atomic hydrogen as a surfactant
5. The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STM
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1. Investigation of in-situ co-doping by Sb and P of germanium films grown on Si(001) by molecular beam epitaxy;Journal of Applied Physics;2018-04-07
2. Formation, Growth Mechanism and Electronic Structures of Ge Films on Si Substrates;Two-Dimensional Nanostructures for Energy-Related Applications;2016-09-30
3. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes;Optics Express;2016-08-09
4. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates;AIP Advances;2014-07
5. Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation;Semiconductor Science and Technology;2012-02-16
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