Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing
Author:
Funder
MEXT
Publisher
Elsevier BV
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering
Reference26 articles.
1. Silicon carbide as a platform for power electronics;Eddy;Science,2009
2. A survey of wide bandgap power semiconductor devices;Millán;IEEE Trans. Power Electron.,2014
3. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices;Neudeck,1999
4. Dependence of thin-oxide films quality on surface microroughness;Ohmi;IEEE Trans. Electron Devices,1992
5. Experimental investigation of surface/subsurface damage formation and material removal mechanisms in SiC grinding;Agarwal;Int. J. Mach. Tool Manuf.,2008
Cited by 52 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Sustainable Electrochemical Mechanical Polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte;Applied Surface Science;2024-08
2. Full-field measurement of residual stress in single-crystal diamond substrates based on Mueller matrix microscopy;Measurement;2024-07
3. Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications;Langmuir;2024-06-03
4. Mechanism of solid-state diffusion reaction in vacuum between metal (Fe, Ni, and Co) and 4H–SiC;Ceramics International;2024-05
5. Mechanism of friction-induced chemical reaction high-efficient polishing single crystal 4H-SiC wafer using pure iron;Tribology International;2024-05
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3