Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties-Reference-Cited by-同舟云学术

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Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties

Published:2018-02 Issue:3 Volume:63 Page:159-168
ISSN:2095-9273
Container-title:Science Bulletin
language:en
Short-container-title:Science Bulletin

Author:

Qiao Jingsi,Pan Yuhao,Yang Feng,Wang Cong,Chai Yang,Ji Wei

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities of China

Research Funds of Renmin University of China

Hong Kong Polytechnic University

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference65 articles.

1. Field-effect tunneling transistor based on vertical graphene heterostructures;Britnell;Science,2012

2. The valley Hall effect in MoS2 transistors;Mak;Science,2014

3. Black phosphorus field-effect transistors;Li;Nat Nanotechnol,2014

4. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus;Qiao;Nat Commun,2014

5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems;Koppens;Nat Nano,2014

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