Defect engineering of Czochralski single-crystal silicon-Reference-Cited by-同舟云学术

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Defect engineering of Czochralski single-crystal silicon

Published:2000-07 Issue:5-6 Volume:28 Page:149-198
ISSN:0927-796X
Container-title:Materials Science and Engineering: R: Reports
language:en
Short-container-title:Materials Science and Engineering: R: Reports

Author:

Sinno T,Dornberger E,von Ammon W,Brown R.A,Dupret F

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference186 articles.

1. T. Abe, in: N.G. Einspruch, H. Huff (Eds.), VLSI Electronics: Microstructure Science, Vol. 12, Academic Press, New York, 1985.

2. Point defects and dopant diffusion in silicon

3. L.A. Girifalco, Statistical Physics of Materials, Wiley, New York, 1973.

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1. Importance of zero cross-point (Cp = 0) control between the vacancy and interstitial Si atom concentration curves to obtain a perfect Si ingot using Si melt growth;Journal of Crystal Growth;2024-10

2. Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution;Crystal Growth & Design;2024-07-18

3. Photoelectrochemical CO₂ Reduction to CO Enabled by a Molecular Catalyst Attached to High-Surface-Area Porous Silicon;Journal of the American Chemical Society;2024-03-15

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