Investigation of gap states in phosphorous-doped ultra-thin a-Si:H by near-UV photoelectron spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Amorphous silicon as a passivant for crystalline silicon
2. Obtaining a higherVoc in HIT cells
3. Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafers
4. Electronic states in a-Si:H/c-Si heterostructures
5. Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to thec−Si(100)/a−Si:HHeterostructure
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