Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses-Reference-Cited by-同舟云学术

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Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses

Published:2004-06 Issue: Volume:338-340 Page:460-464
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Niehus M.,Sanguino P.,Schwarz R.,Fedorov A.,Martinho J.M.G.,Soares M.J.,Monteiro T.,Wünsch F.,Kunst M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Yellow luminescence and related deep states in undoped GaN

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Layer-by-Layer Growth of GaN on Sapphire by Low Temperature Cyclic Pulsed Laser Deposition / Nitrogen RF Plasma

4. Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate

5. Dynamics of bound‐exciton luminescences from epitaxial GaN

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1. Synthesis and characterization of silicon-doped polycrystalline GaN films by r.f. sputtering;Bulletin of Materials Science;2015-09

2. Atomic structures beyond the spherical approximation along with PNC as conjectured explanations to Urbach tailing in neutral isolated ytterbium;The European Physical Journal B;2011-10-31

3. A physical explanation to the controversial Urbach tailing universality;The European Physical Journal Plus;2011-01

4. Correlation between transient decays in wide gap semiconductors: Photoluminescence vs. photocurrent;Superlattices and Microstructures;2007-07

5. Photoinduced excess carrier dynamics in PLD-grown ZnO;Superlattices and Microstructures;2007-07

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