Author:
Ross G.G.,Barba D.,Dahmoune C.,Wang Y.Q.,Martin F.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
9 articles.
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1. Creation of Si nanocrystals from SiO2/Si by He and H ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04
2. Depth-profiling of implanted 28Si by (α,α) and (α,p0) reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
3. (Invited) Synthesis and Characterization of Group IV Nanocrystals;ECS Transactions;2010-04-16
4. Time-resolved photoluminescence of implanted SiO2:Si+ films;Journal of Non-Crystalline Solids;2009-07
5. Optical index profile of nonuniform depth-distributed silicon nanocrystals within SiO2;Journal of Applied Physics;2009-01