Effects of oxide layer thickness on Si-nanocrystal photoluminescence intensity in Si+-implanted SiO2∕Si systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234739
Reference18 articles.
1. Above‐band‐gap photoluminescence from Si fine particles with oxide shell
2. Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices
3. Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films
4. The effect of implantation dose on the microstructure of silicon nanocrystals in SiO2
5. The effect of size and depth profile of Si-nc imbedded in a SiO2 layer on the photoluminescence spectra
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