Ionization probability of secondary ions sputtered from Si(111) and Ge(111) surfaces-Reference-Cited by-同舟云学术

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Ionization probability of secondary ions sputtered from Si(111) and Ge(111) surfaces

Published:2011-02 Issue:3 Volume:269 Page:257-262
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sakuma Yasuhiro,Kato Masahiko,Yagi Shinya,Soda Kazuo

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. Practical Surface Analysis;Williams,1992

2. Sputtering by Particle Bombardment,2007

3. Secondary-ion emission from clean and oxygen-covered beryllium surfaces

4. Ion neutralisation in secondary ion mass spectrometry

5. Inverse velocity trends in secondary ion mass spectrometry; a new method for quantification?

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of Si+ and Si2+ sputtering yields on residual oxygen impurity;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-05

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