Incorporation of active Fe impurities in GaInP by high temperature ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Transition metal implants in In0.53Ga0.47As
2. Cap and capless annealing of Fe‐implanted InGaAs
3. Carrier trapping in iron-doped GaInP
4. High-resistance buried layers by MeV Fe implantation in n-type InP
5. Correlation among structural, electrical, and deep-level properties of Fe centers implanted in InP
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction;Journal of Applied Physics;2016-10-14
2. Electrical and structural characterization of Fe implanted GaInP;Physica B: Condensed Matter;2007-12
3. Deep levels controlling the electrical properties of Fe-implanted GaInP∕GaAs;Applied Physics Letters;2007-04-30
4. Local structure of Fe incorporated in GaInP layers by high temperature ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
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