Mixing behaviour of buried transition metal layer in silicon due to swift heavy ion irradiation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
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1. Room temperature fabrication of poly-crystalline Si thin films via Al-induced crystallization under 500 keV Xe+ ion irradiation;Journal of Applied Physics;2022-09-07
2. Swift heavy ion assisted growth of silver nanoparticles embedded in hafnium oxide matrix;Journal of Applied Physics;2021-07-28
3. An assessment on crystallization phenomena of Si in Al/a-Si thin films via thermal annealing and ion irradiation;RSC Advances;2020
4. Assessing a thermal spike model of swift heavy ion–matter interactions via Pd1−xNix/Si interface mixing;Physical Chemistry Chemical Physics;2019
5. Swift heavy ion induced mixing at Pd0.60 Ni0.40/quartz interface;AIP Conference Proceedings;2017
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