Damage profiles and ion distribution in Pt-irradiated SiC
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference36 articles.
1. Atomic-level simulations of epitaxial recrystallization and amorphous-to-crystalline transition in4H−SiC
2. Damage accumulation and defect relaxation in4H−SiC
3. Deep level defects in electron-irradiated 4H SiC epitaxial layers
4. Amorphization of SiC under ion and neutron irradiation
5. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays
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