Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications;Wakejima;Electron. Lett.,2006
2. Remarkable reduction of on-resistance by ion implantation in GaN/AlGaN/GaN HEMTs with low gate leakage current;Nomoto;IEEE Electron Device Lett.,2007
3. 55 nm gate ion-implanted GaN-HEMTs on sapphire and Si substrates;Katayose;Phys. Status Solidi C,2011
4. Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV;Huang,2008
5. High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics;Gu;Phys. Status Solidi C,2013
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1. Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation;Micromachines;2024-01-18
2. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings;IEEE Transactions on Electron Devices;2023-09
3. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation;physica status solidi (a);2023-05-10
4. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes;Optics Express;2022-07-12
5. Surface chemical disorder and lattice strain of GaN implanted by 3 MeV Fe10+ ions;Chinese Physics B;2021-11-06
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