Xe distribution in amorphous SiO 2 as a function of implantation and thermal annealing parameters-Reference-Cited by-同舟云学术

Xe distribution in amorphous SiO 2 as a function of implantation and thermal annealing parameters

Published:2014-11 Issue: Volume:339 Page:46-52
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Naas A.,Ntsoenzok E.,De Sousa-Meneses D.,Hakim B.,Beya-Wakata A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

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3. Ion-induced changes in the average radius of Ag clusters and the refractive index of SiO2: Ag thin films;Nikolaeva;J. Mater. Sci.: Mater. Electron.,2003

4. Ion implantation- and radiation-induced structural modifications in amorphous SiO2;Devine;J. Non-Cryst. Solids,1993

5. Preparation and characterization of porous silica xerogel film for low dielectric application

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