Pre-irradiation memory effect on the photoluminescence intensity of Ge-implanted SiO2 layers
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference12 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime
3. Depth distribution of luminescent Si nanocrystals in Si implanted SiO2 films on Si
4. Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2
5. Violet and orange luminescence from Ge-implanted SiO2 layers
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1. Investigation of a Ge nanoparticle film by means of electron stimulated photon emission spectroscopy;Journal of Electron Spectroscopy and Related Phenomena;2014-03
2. Evolution of Structural Defects in SiO x Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment;Chinese Physics Letters;2008-03
3. Structural property of nanoporous silicon: evidence of near ultraviolet photoluminescence;Journal of Physics D: Applied Physics;2007-08-16
4. Microstructure of Ge:Ta2O5 Granular Thin Films: an Application of TEM-Tomography;MATERIALS TRANSACTIONS;2007
5. Origin of the 370-nm luminescence in Si oxide nanostructures;Applied Physics Letters;2005-05-16
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