SiC nanoboulders on silicon – a nuclear reaction analysis study of low energy 13C implanted and subsequently electron beam annealed (100) silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Energy dependence of quantum dot formation by ion sputtering
2. Roughness Evolution of Ion Sputtered Rotating InP Surfaces: Pattern Formation and Scaling Laws
3. Nanostructure fabrication of InP by low energy ion beams
4. Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing
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2. Hardness Study of Carbon Nanotube and Silicon Transistors Under the High Energy Electron Beam Radiation Effect;Journal of Nanoelectronics and Optoelectronics;2018-01-01
3. Structural and defects induced phenomena in γ-rays irradiated 6H-SiC;Radiation Physics and Chemistry;2016-10
4. Enhanced reduction of silicon oxide thin films on silicon under electron beam annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08
5. Dual N/Pb ion-implanted Si: Temperature dependence of the novel shift of the Pb peak under electron beam annealing;Applied Surface Science;2011-03
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