Transistor challenges – A DRAM perspective-Reference-Cited by-同舟云学术

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Transistor challenges – A DRAM perspective

Published:2005-08 Issue:1-2 Volume:237 Page:228-234
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Faul Juergen W.,Henke Dietmar

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. R.H. Dennard, US Patent 3,387,286, 4th June 1968.

2. D.-C. Kim et al., IEDM Techn. Digest, 2001, Session 18-03, p. 399.

3. International Technology Roadmap for Semiconductors (ITRS) 2003. Available from: .

4. J. Amon et al., IEDM Techn. Digest, 2004, Session 03-05.

5. K.H. Kuesters, J. Alsmeier, J. Faul, J. Lützen, T. Zell, Semiconductor Fabtech, 19th ed., 2003, p. 97.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam;Applied Physics Express;2009-01-16

2. Irradiation Effects of Methanol Cluster Ion Beams on Solid Surfaces;MRS Proceedings;2007

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