Author:
Ji Huihui,Yu Min,Shi Hao,Shi Xiaokang,Huang Ru,Zhang Xing,Zhang Jinyu,Suzuki Kunihiro,Oka Hideki
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. C. Hobbs et al., 80nm poly-Si gate CMOS with HfO2 gate dielectric, IEDM, 2001
2. B.H. Lee et al., Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application, IEDM, 1999
3. Ion implantation impurity profiles in HfO2;Suzuki;IEEE Trans. Electron Dev.,2002
4. An efficient molecular dynamics scheme for predicting dopant implant profiles in semiconductors;Beardmore;Nucl. Instr. and Meth. B,1999
5. Molecular dynamics simulation of ion ranges at keV energies;Nordlund;Nucl. Instr. and Meth. B,1996
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