On the effect of oxygen on the creation of colour centres in swift heavy ion-irradiated AlN-Reference-Cited by-同舟云学术

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On the effect of oxygen on the creation of colour centres in swift heavy ion-irradiated AlN

Published:2023-03 Issue: Volume:536 Page:18-22
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sall M.,Yahyaoui O.,Alassaad H.,Aubrit F.,Grygiel C.,Ngono-Ravache Y.,Balanzat E.,Monnet I.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference40 articles.

1. An AlGaN tunnel junction light emitting diode operating at 255 nm;Pandey;Appl. Phys. Lett.,2020

2. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources;Zhao;Sci. Rep.,2015

3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature,2006

4. The growth and optical properties of large, high-quality AlN single crystals;Strassburg;J. Appl. Phys.,2004

5. Defects in AlN as candidates for solid-state qubits;Varley;Phys. Rev. B,2016

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructural modifications induced by He implantation at elevated temperature in AlN;Journal of the European Ceramic Society;2024-11

2. Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC;Nanotechnology;2024-04-23

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