Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation-Reference-Cited by-同舟云学术

Structural disorder and distribution of impurity atoms in β-Ga2O3 under boron ion implantation

Published:2023-04 Issue: Volume:537 Page:65-70
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nikolskaya A.A.^ORCID,Korolev D.S.,Trushin V.N.,Drozdov M.N.,Yunin P.A.,Pitirimova E.A.,Kudrin A.V.^ORCID,Okulich E.V.,Okulich V.I.,Mikhaylov A.N.,Tetelbaum D.I.

Funder

Ministry of Education and Science of the Russian Federation

Council on grants of the President of the Russian Federation

Institute for Physics of Microstructures of the Russian Academy of Sciences

Russian Foundation for Basic Research

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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