Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference34 articles.
1. Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon
2. Effect of the Ion Mass and Energy on the Response of 70-nm SOI Transistors to the Ion Deposited Charge by Direct Ionization
3. Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node
4. Geant4—a simulation toolkit
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