A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM-Reference-Cited by-同舟云学术

A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

Published:2017-09 Issue: Volume:406 Page:437-442
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Wang Bin,Zeng Chuanbin^ORCID,Geng Chao,Liu Tianqi,Khan Maaz,Yan Weiwei,Hou Mingdong,Ye Bing,Sun Youmei,Yin Yanan,Luo Jie,Ji Qinggang,Zhao Fazhan,Liu Jie

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

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5. Single event error immune CMOS RAM;Andrews;IEEE Trans. Nucl. Sci.,1982

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