Single Event Effect Mechanism Study in 130nm Fully Depleted SOI Technology Devices-Reference-Cited by-同舟云学术

Single Event Effect Mechanism Study in 130nm Fully Depleted SOI Technology Devices

Published:2024 Issue: Volume: Page:
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Chen Rui¹²,Wang Ziyu¹²,Li Sai³,Han Jianwei¹²,Liang Yanan¹,Chen Qian¹²,Shangguan Shipeng¹,Yuan Runjie¹²

Affiliation:

1. National Space Science Center, Chinese Academy of Sciences

2. School of Astronomy and Space Science, University of Chinese Academy of Sciences

3. State Key Laboratory of Laser Propulsion & Application, Space Engineering University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Link

https://www.jstage.jst.go.jp/article/elex/advpub/0/advpub_21.20240434/_pdf

Reference30 articles.

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3. [3] A. H. Johnston: “Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices,” IEEE Transactions on Device and Materials Reliability 10 (2010) 449 (DOI:10.1109/TDMR.2010.2048111).

4. [4] Koons HC, Mazur JE, Selesnick RS, et al.: “The impact of the Space Environment on Space Systems,” 6^th Space Charging Technology Conference (1999).

5. [5] A. C. Tribble: “The space environment and its impact on spacecraft design,” AIAA Aerospace Sciences Meeting & Exhibit 31st AIAA Aerospace Sciences Meeting and Exhibit (2013).