Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions-Reference-Cited by-同舟云学术

Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions

Published:2018-05 Issue: Volume:423 Page:16-21
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Bommali R.K.,Ghosh S.,Khan S.A.,Srivastava P.

Funder

IAEA

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference36 articles.

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4. Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiNx;Chung;Mater. Res. Exp.,2015

5. Surface passivation of crystalline silicon wafer via hydrogen plasma pre-treatment for solar cells;Kim;Sol. Energ. Mat. Sol. C,2011

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