Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals-Reference-Cited by-同舟云学术

Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals

Published:2014-08 Issue: Volume:332 Page:15-18
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kaida T.,Kamioka K.,Ida T.,Kuriyama K.,Kushida K.,Kinomura A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Growth of 2 inch ZnO bulk single crystal by the hydrothermal method

2. The characteristics of aluminium-doped zinc oxide films prepared by pulsed magnetron sputtering from powder targets

3. T. Oga, Y. Izawa, K. Kuriyama, K. Kushida, Q. Xu, in: The American Institute of Physics Conference Proceedings 1399, Physics of Semiconductors, 30th International Conference on the Physics of Semiconductor, 2011, p. 67.

4. Hydrogen as a Cause of Doping in Zinc Oxide

5. Raman scattering investigation of hydrogen and nitrogen ion implanted ZnO thin films

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