Raman scattering investigation of hydrogen and nitrogen ion implanted ZnO thin films
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference14 articles.
1. Recent advances in ZnO materials and devices
2. Experimental Confirmation of the Predicted Shallow Donor Hydrogen State in Zinc Oxide
3. Hydrogen as a Cause of Doping in Zinc Oxide
4. Progress in ZnO materials and devices
5. Modification of electrical conductivity in RF magnetron sputtered ZnO films by low-energy hydrogen ion implantation
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