Electrical properties changes induced by electron radiation at TiO2/Si interface
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Hafnium and zirconium silicates for advanced gate dielectrics
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4. Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks
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1. Optical and electrical characteristics of 17 keV X-rays exposed TiO 2 films and Ag/TiO 2 / p -Si MOS device;Materials Science in Semiconductor Processing;2017-06
2. 1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface;Journal of Applied Physics;2014-05-07
3. Demonstration, radiation tolerance and design on a betavoltaic micropower;Energy;2013-03
4. Effects of 6MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07
5. Radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation;Rare Metals;2012-06
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