Effects of 6MeV electron irradiation on the electrical properties and device parameters of Al/Al2O3/TiO2/n-Si MOS capacitors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference33 articles.
1. Satellite Anomalies from Galactic Cosmic Rays
2. Characteristics and radiation effects of MOS capacitors with Al2O3 layers in p-type silicon
3. Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices
4. Correlating the Radiation Response of MOS Capacitors and Transistors
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